{"created":"2023-06-20T15:11:25.897119+00:00","id":41083,"links":{},"metadata":{"_buckets":{"deposit":"9e8a449b-f1f8-4411-8519-8297e28a7275"},"_deposit":{"created_by":1,"id":"41083","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"41083"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00041083","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["501442","501444","501451","501453","501452","501446","501443","501445","501448","501447","501449","501450"],"item_3_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Crystal growth of silicon spherical crystal and its surface oxidation"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-10-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"645","bibliographicPageStart":"620","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告"},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"SL-Jで行われたSiの球状結晶成長実験の結果を述べる。この実験は2種類の実験からなる。第1は真球状に加工したSiの単結晶を出発材料とし、これを均一な温度場の中で融解･成長させるものである。加熱によって結晶は外周から融解を開始するが内部に未融解の結晶を残した状態で冷却に転じると内部の結晶を種結晶として球状の結晶が成長する。第2は棒状Si単結晶を出発材料としこの先端を加熱することによりSiの融液球を形成し未融解の棒を種結晶とし再成長させるものである。実験は軌道上時間で3日目の20時30分より開始され4日の3時25分終了した。温度変化は両試料ともプログラム通り順調に行われ特に問題はなく実験が完了した。成長後、電気炉を日本に持ち帰り、内部に装着してあったカートリッジを電気炉からはずし試料を取り出した。球状結晶は融解･成長が行われたものの容積はかなり小さくなっておりかつ半球状に近い形態に変化していた。半球状の表面には内部の球状結晶を種とし融液の内側から成長したと見られる模様が見られた。特に結晶の対称性を反映し、対称の位置にファセットの形成が見られファセットの周囲には(111)面で構成される巨大なステップが見られた。Si容積の減少は融液が石英ルツボに開けてあった小さな穴を通り外側のTaカートリッジにふれ共融が起こったためであることが判明した。成長後の球結晶を切断し研磨後エッチングを行い固液界面の位置、不純物縞の存在の有無を調べた。それによると、部分的ながら成長が行われており、最も厚い成長層の厚さは1.2mmであった。この部分には不純物縞が消失しており、熱対流とともに非定常マランゴニ流も抑制されたものと考えられる。棒状Siに関して見てみると、融解後最初は先端に融液球が形成されていたものと見られるが、ある時点でこの融液が棒の側面に移動し、このため“たれ下がり\"現象が発生したことが判明した。この結果融液がTaのカートリッジの内側に置かれている石英ライナー管に接しこれが原因で冷却時又は輸送時結晶の破壊が発生した。この破片を集め原形を復元して見ると最初出来ていたと思われる融液球の直径は約2cmでありほぼ予定通りであったが、その後の側面への移動によって成長は棒状Siの未融解部を種として棒の軸に対し垂直方向に進んだことがわかった。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Experimental results on crystal growth of Si spherical crystal performed in Space Lab-Japan (SL-J) are described. This consists of two kinds of experiments. The first is the experiment which melt and grow a completely spherical Si single crystal selected as start material in uniform temperature field. Although the crystal melts by heating from fringe, in case of turning heating to cooling in state containing unmelted crystal, spherical crystal which has internal crystal as seed crystal grows. The second is the experiment which re-grow crystal containing unmelted rod as seed crystal, in which forming Si fused solution sphere by heating the front end of Si single crystal rod selected as start material. The experiment started at 20:30 of the third day after launching and ended at 3:25 of the fourth day. Performing temperature control as the program, no problems arose during the experiment. After growing, electric furnace was transported to Japan and the sample cartridge was removed from the electric furnace. Although melting and growth of spherical crystal was observed, the volume of crystal was significantly reduced and its shape was like semi-sphere. The pattern considered to have grown from inside of melts by making internal spherical crystal as seed crystal was observed on surface of the semi-sphere. Especially, due to effect of symmetry of crystal, forming of facet was observed at facet position, together with the giant step consisted of (111) face around the facet. It was made clear that the cause of reduction of Si volume was due to arising of eutectic phenomenon based on contact of melts to the out-side Ta cartridge through small holes opened in silica crucible. After cutting the grown spherical crystal and taking etching following polishing, position of solid-liquid interface and presence of impurity pattern were investigated. As the results, it was found out that crystal growth was partially proceeded and the most thick grown layer was 1.2 mm in thickness. As impurity pattern in this region disappeared, suppression of non-stationary Marangoni convection as well as thermal convection was estimated. As to rod-like Si, it is considered for melts sphere to have been formed at front end at first, and afterthat have been moved to side. It became clear that the 'hanging' phenomenon has arose due to above mentioned moving. This result lead to contact of melts to the silica linear tube fixed to inside of Ta cartridge and further resulted fracture of the crystal during cooling or transport. Gathering these debrises and reassembling, melts guessed to be produced at first time is about 2 cm in diameter as expected, but it was found out that succeeding movement to side caused the progress direction of crystal growth turned to normal to rod axis by using unmelted region of rod-like Si as seed crystal.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0004116009","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-940002 V.2","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京大学 工学部"},{"subitem_text_value":"東洋大学 工学部"},{"subitem_text_value":"豊橋科学技術大学"},{"subitem_text_value":"東京大学 工学部"},{"subitem_text_value":"東京大学 工学部"},{"subitem_text_value":"東京大学 工学部"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"University of Tokyo Faculty of Engineering"},{"subitem_text_language":"en","subitem_text_value":"Toyo University Faculty of Engineering"},{"subitem_text_language":"en","subitem_text_value":"Toyohashi University of Technology"},{"subitem_text_language":"en","subitem_text_value":"University of Tokyo Faculty of Engineering"},{"subitem_text_language":"en","subitem_text_value":"University of Tokyo Faculty of Engineering"},{"subitem_text_language":"en","subitem_text_value":"University of Tokyo Faculty of Engineering"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"西永, 頌"}],"nameIdentifiers":[{"nameIdentifier":"501442","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"菅野, 卓雄"}],"nameIdentifiers":[{"nameIdentifier":"501443","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"斉藤, 制海"}],"nameIdentifiers":[{"nameIdentifier":"501444","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"河東田, 隆"}],"nameIdentifiers":[{"nameIdentifier":"501445","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"浅田, 邦博"}],"nameIdentifiers":[{"nameIdentifier":"501446","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岸, 真人"}],"nameIdentifiers":[{"nameIdentifier":"501447","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishinaga, Tatau","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501448","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugano, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501449","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Saito, Osami","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501450","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Katoda, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501451","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Asada, Kunihiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501452","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kishi, Masato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501453","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"04116009.pdf","filesize":[{"value":"1.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"04116009.pdf","url":"https://jaxa.repo.nii.ac.jp/record/41083/files/04116009.pdf"},"version_id":"7cf7c7bd-ca8d-42a2-840a-a4ba6df67299"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"けい素","subitem_subject_scheme":"Other"},{"subitem_subject":"球状結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"表面酸化","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"温度依存性","subitem_subject_scheme":"Other"},{"subitem_subject":"形状","subitem_subject_scheme":"Other"},{"subitem_subject":"対称性","subitem_subject_scheme":"Other"},{"subitem_subject":"ファセット","subitem_subject_scheme":"Other"},{"subitem_subject":"巨大ステップ","subitem_subject_scheme":"Other"},{"subitem_subject":"容積減少","subitem_subject_scheme":"Other"},{"subitem_subject":"共融","subitem_subject_scheme":"Other"},{"subitem_subject":"固液界面位置","subitem_subject_scheme":"Other"},{"subitem_subject":"不純物縞","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"spherical crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"surface oxidation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature dependence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"shape","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"symmetry","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"facet","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"giant step","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"volume reduction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"eutectics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"solid-liquid interface position","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"impurity pattern","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"シリコン球結晶の成長とその表面酸化","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコン球結晶の成長とその表面酸化"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"41083","relation_version_is_last":true,"title":["シリコン球結晶の成長とその表面酸化"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:27:07.869550+00:00"}