{"created":"2023-06-20T15:11:26.085838+00:00","id":41087,"links":{},"metadata":{"_buckets":{"deposit":"684afc74-f26b-405d-8707-626de58f1a23"},"_deposit":{"created_by":1,"id":"41087","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"41087"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00041087","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["501473","501470","501475","501477","501472","501471","501474","501476"],"item_3_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Fabrication of Si-As-Te amorphous semiconductor under microgravity environment"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-10-20","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"714","bibliographicPageStart":"699","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告"},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Spacelab-Jの微小重力環境下において製造されたSi-As-Teカルコゲナイド系アモルファス半導体について報告する。Si-As-TeはIV-III-II配位結合ネットワークにより構成されているために、広い範囲のガラス化領域を有しており、その中で様々な物理的性質が制御可能となる。1例をあげると、Si(x)(As2Te3)(1-x)系において組成比xを変えることにより電気的バンドギャップは0.7eVから1.8eVまで可変である。このような物理定数の組成依存性の系統的研究は、この種のランダムネットワーク材料の電子的そして原子的物性の両面を合わせて探求する上で非常に有意義である。また、この系は基礎物理の観点のみならず、電子素子、光電素子への応用という工学的側面においても極めて魅力的な材料である。ところが、このような基礎また応用物理分野の研究を推進するために必要とされる均質なアモルファス半導体の作製は、材料を構成する各組成元素の比重、融点および蒸気圧の違いのため地上実験では困難であった。この飛行実験(FMPT)の主たる目的は、均質な多元素化合物アモルファス半導体を微小重力下において製造し、アモルファス構造またその電子物性を地上において作製した試料と比較評価することである。本報告では、まず、Si(x)(As2Te3)(1-x)系材料をFMPTに対して選定した理由、またその基礎物理および技術応用にかかわる特質を紹介する。次いで、FMPT実験の内容と試験材料について述べ、最後に、これまでに明らかとなった材料物性を地上試料との比較に焦点をおき詳述する。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Fabrication of Si-As-Te chalcogenite amorphous semiconductor under microgravity in Spacelab-J is described. As Si-As-te system is constructed based on 4-3-2 coordinate bond network, it has wide vitrification area, in which various physical properties could be controlled. For example, in Si(x)(As2Te3)(1-x) system, variation of the composition rate x brings from 0.7 to 1.8 eV of variation of electrical bandgap. Systematic investigation on composite rate dependence of such physical constants is useful for research for both aspects of electronic and atomic properties of these random network materials. Moreover, this system is very interesting not only from view point of basic physics but also from technological aspect of application to electronic elements, photoelectric device etc. However, homogeneous amorphous semiconductors necessary for performing investigations in the field of basic or applied physics were difficult to produce on ground surface so far, due to difference of specific gravity, melting point and vapor pressure of constituent elements of materials. The main object of this flight experiments (First Material Production Test:FMPT) is to compare homogeneous multielement compound amorphous semiconductors produced under microgravity environment with samples obtained on ground surface on amorphous structure and electronic properties. This report introduce the reason of selecting Si(x)(As2Te3)(1-x) as FMPT material and the relative characteristics to basic and application technology. Further, the contents of FMPT experiments and samples are also described, and finally, material properties made clear so far is described in details by focussing on comparing with the samples produced on ground surface.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0004116013","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-940002 V.2","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"大阪大学 基礎工学部"},{"subitem_text_value":"大阪大学 基礎工学部"},{"subitem_text_value":"大阪大学 基礎工学部"},{"subitem_text_value":"大阪大学 基礎工学部"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Osaka University Faculty of Engineering Science"},{"subitem_text_language":"en","subitem_text_value":"Osaka University Faculty of Engineering Science"},{"subitem_text_language":"en","subitem_text_value":"Osaka University Faculty of Engineering Science"},{"subitem_text_language":"en","subitem_text_value":"Osaka University Faculty of Engineering Science"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"浜川, 圭弘"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岡本, 博明"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"服部, 公則"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"佐田, 千年長"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hamakawa, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Okamoto, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hattori, Kiminori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sada, Chitose","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"04116013.pdf","filesize":[{"value":"967.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"04116013.pdf","url":"https://jaxa.repo.nii.ac.jp/record/41087/files/04116013.pdf"},"version_id":"0e5a3d15-a2e3-4119-a938-2c7cd0df7b17"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"化合物半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体製造","subitem_subject_scheme":"Other"},{"subitem_subject":"アモルファス半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"均質性","subitem_subject_scheme":"Other"},{"subitem_subject":"アモルファス構造","subitem_subject_scheme":"Other"},{"subitem_subject":"電子物性","subitem_subject_scheme":"Other"},{"subitem_subject":"FMPT","subitem_subject_scheme":"Other"},{"subitem_subject":"第1次材料製造実験","subitem_subject_scheme":"Other"},{"subitem_subject":"化学組成比","subitem_subject_scheme":"Other"},{"subitem_subject":"電気伝導度","subitem_subject_scheme":"Other"},{"subitem_subject":"温度依存性","subitem_subject_scheme":"Other"},{"subitem_subject":"活性化エネルギー","subitem_subject_scheme":"Other"},{"subitem_subject":"キャリア移動度","subitem_subject_scheme":"Other"},{"subitem_subject":"不純物効果","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"compound semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor production","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"amorphous semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"homogeneity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"amorphous structure","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"electronic property","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"FMPT","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"First Material Production Test","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"chemical composition ratio","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"electrical conductivity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature dependence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"activation energy","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"carrier mobility","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"impurity effect","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"無重力下におけるSi-As-Teアモルファス半導体の製造","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"無重力下におけるSi-As-Teアモルファス半導体の製造"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"41087","relation_version_is_last":true,"title":["無重力下におけるSi-As-Teアモルファス半導体の製造"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:27:02.617730+00:00"}