{"created":"2023-06-20T15:12:12.706055+00:00","id":41994,"links":{},"metadata":{"_buckets":{"deposit":"0c3330ae-fe30-40c6-962d-972b97558342"},"_deposit":{"created_by":1,"id":"41994","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"41994"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00041994","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["501962","501963","501973","501971","501969","501965","501966","501970","501967","501975","501964","501974","501968","501972"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"グレーデッド溶質濃縮法による均質なIn(0.3)Ga(0.7)As結晶の成長"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-09-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"14","bibliographicPageStart":"11","bibliographic_titles":[{},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"一様な混合結晶を微小重力下でその溶融体から得る新しい結晶成長法「グレーデッド溶質濃縮法」を開発したが、さらにこの方法を部分溶融法の考えを採用することで発展させ、「濃度勾配部分溶融法」と命名した。スペースシャトルや国際宇宙ステーション(ISS)でも、10(exp -3)〜10(exp -4)g程度の残存加速度が残されていて、溶質の非一様性の原因となるが、この方法は残存加速度による成長界面での溶質損失を相殺し、均質な結晶を生成させる。この方法によって地上実験で、一様部分の長さが20mm以上のIn(x)Ga(1-x)As(x=0.20-0.33)の単結晶を得た。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"A new crystal growth method 'the graded solute concentration method' for obtaining homogeneous mixed crystals from their melt in microgravity has been developed and further this method developed by adopting the idea of partial melting method and named 'the concentration gradient partial melting method.' In the Space Shuttle or in the International Space Station (ISS), residual acceleration on the order of 10(exp -3) - 10(exp -4)g still remains and it causes inhomogeneous distribution of the solute, but this method compensates solute loss at the growing interface due to the residual acceleration and produces homogeneous crystals. On the ground-based experiments, single crystals of In(x)Ga(1-x)As with x = 0.20 - 0.33 having longer than 20 mm homogeneous parts were obtained by this method.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0029300001","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-000007E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"日本電信電話 物性科学基礎研究所"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Nippon Telegraph and Telephone Corporation Basic Research Laboratories"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co Ltd"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co Ltd"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co Ltd"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"加藤, 浩和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松本, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岩井, 正行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鶴, 哲也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwai, Masayuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuru, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"29300001.pdf","filesize":[{"value":"988.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"29300001.pdf","url":"https://jaxa.repo.nii.ac.jp/record/41994/files/29300001.pdf"},"version_id":"726f5489-e2c8-4f94-891f-adfc6336becb"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"In(0.3)Ga(0.7)As","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"残存加速度","subitem_subject_scheme":"Other"},{"subitem_subject":"グレーデッド溶質濃縮法","subitem_subject_scheme":"Other"},{"subitem_subject":"部分溶融法","subitem_subject_scheme":"Other"},{"subitem_subject":"濃度勾配部分溶融法","subitem_subject_scheme":"Other"},{"subitem_subject":"スペースシャトル","subitem_subject_scheme":"Other"},{"subitem_subject":"国際宇宙ステーション","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"一様混合結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"地上実験","subitem_subject_scheme":"Other"},{"subitem_subject":"In(0.3)Ga(0.7)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"residual acceleration","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"graded solute concentration method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"partial melting method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"concentration gradient partial melting method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Space Shuttle","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"International Space Station","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"homogeneous mixed crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ground based experiment","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"41994","relation_version_is_last":true,"title":["Homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:55.273002+00:00"}