@techreport{oai:jaxa.repo.nii.ac.jp:00041995,
 author = {中村, 裕彦 and 加藤, 浩和 and 木下, 恭一 and 依田, 真一 and Nakamura, Hirohiko and Kato, Hirokazu and Kinoshita, Kyoichi and Yoda, Shinichi},
 month = {Sep},
 note = {濃度勾配部分溶解(CGPM)法で起こると期待される固液反応を熱力学に基づいて定性的に調べた。得られた知見を元に、CGPMでの可能な過程について定性的に記述した。さらに、均質なIn(x)Ga(1-x)As(x=0.3)結晶を得るためにCGPMを応用する条件を明らかにする目的で、定量的な評価を行った。, Solid-liquid reactions, which are expected to occur in Concentration Gradient Partial Melting (CGPM) method, were examined qualitatively on the basis of the thermodynamics. Using the obtained knowledge, possible processes in CGPM were described qualitatively. In addition, quantitative estimation was carried out to clarify conditions for utilizing CGPM to obtain homogeneous In(x)Ga(1-x)As crystals with x value of 0.3., 資料番号: AA0029300002, レポート番号: NASDA-TMR-000007E},
 title = {Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As},
 year = {2000}
}