@techreport{oai:jaxa.repo.nii.ac.jp:00041997,
 author = {木下, 恭一 and 加藤, 浩和 and 松本, 聡 and 依田, 真一 and Yu, J. and 夏井坂, 誠 and 正木, 匡彦 and 越川, 尚清 and 中村, 裕広 and 中村, 富久 and Kinoshita, Kyoichi and Kato, Hirokazu and Matsumoto, Satoshi and Yoda, Shinichi and Yu, J. and Natsuisaka, Makoto and Masaki, Tadahiko and Koshikawa, Naokiyo and Nakamura, Yasuhiro and Nakamura, Tomihisa},
 month = {Sep},
 note = {InAs-GaAs系の相互拡散係数と、InAs-(113)InAs系におけるInAsの自己拡散係数を観測ロケットTR-IA-7(宇宙実験用小型ロケット-7)を使い、微小重力中でガラス封入技法とせん断セル法を組み合わせて、精密に測定した。測定された拡散係数は、温度1,070度Cから1,200度Cの間で1.2から4.1×10(exp -8)m(exp 2)/sであった。標準的組成に対して有効数字2桁の制度を達成した。測定した温度範囲では、拡散係数はT(exp 5)に依存したようだ。, Interdiffusion coefficients of the InAs-GaAs system and self diffusion coefficients of InAs in the system InAs-(113)InAs have been measured accurately by using the sounding rocket TR-IA-7 (Test Rocket-1A-7) and the shear cell method combined with glass sealing technique in microgravity. Measured diffusion coefficients were in the range between 1.2 to 4.1 x 10(exp -8) m(exp 2)/s at temperatures between 1,070 and 1,200 C. Two significant digits were obtained for regular compositional profile. In the measured temperature range, diffusion coefficients seemed to be dependent on T(exp 5)., 資料番号: AA0029300004, レポート番号: NASDA-TMR-000007E},
 title = {InAs-GaAs interdiffusion measurements},
 year = {2000}
}