@techreport{oai:jaxa.repo.nii.ac.jp:00041998,
 author = {長島, 敏夫 and 加藤, 浩和 and 林, 義雄 and - and 木下, 恭一 and Nagashima, Toshio and Kato, Hirokazu and Hayashi, Yoshio and Hayakawa, Harunobu and Kinoshita, Kyoichi},
 month = {Sep},
 note = {溶融In(0.8)Ga(0.2)Asの熱拡散率をレーザ・フラッシュ法を使って測定した。In(0.8)Ga(0.2)As 試料は薄い黒鉛円盤に挟まれ、砒素の高蒸気圧に耐える充分な強度を有した平面窓を持つ水晶容器に封入した。結果として、3層のセルを形成した。溶融In(0.8)Ga(0.2)Asの熱拡散率は融点から1,150度Cまでで、10〜12mm(exp 2)/sであった。測定された熱拡散率のばらつきは5%以下であった。, Thermal diffusivity of molten In(0.8)Ga(0.2)As was measured using the laser-flash method. The sample In(0.8)Ga(0.2)As was sandwiched between thin graphite disks, and sealed in a transparent quartz container with a flat window of sufficient strength to withstand the high-vapor pressure of arsenic. As a result, a three-layered cell was formed. Thermal diffusivity of molten In(0.8)Ga(0.2)As was 10 - 12 mm(exp 2)/s from melting point to 1,150 C. Scattering of the measured thermal diffusivity was less than 5 percent., 資料番号: AA0029300005, レポート番号: NASDA-TMR-000007E},
 title = {Measurements of thermal diffusivity of molten InGaAs by the laser flash method},
 year = {2000}
}