@techreport{oai:jaxa.repo.nii.ac.jp:00041999,
 author = {龍見, 雅美 and 加藤, 浩和 and 木下, 恭一 and Tatsumi, Masami and Kato, Hirokazu and Kinoshita, Kyoichi},
 month = {Sep},
 note = {InAs濃度勾配のあるInGaAs出発物質を方向性固化法で準備した。材料は過冷却をおこすことなく、巨視的微視的になめらかな濃度分布を持っていた。成長実験のためのIn成分xが0.3の試料は、x=0.4の材料物質から切り出した。過冷却領域でのIn濃度の微視的評価は、自由核生成が成長界面の前で起こり、新たな成長界面が形成されることを示唆していた。, InGaAs starting materials having gradient InAs concentrations were prepared by the directionally solidification method. The materials have macro and microscopically smooth concentration profile without occurrence of a constitutional supercooling. The sample having In composition (x) of 0.3 for growth experiments was cut from the source materials having x = 0.4. The microscopic evaluation of In concentration on a region of the constitutional supercooling suggests that free nucleations occur ahead of a growth interface and a new growth interface is formed., 資料番号: AA0029300006, レポート番号: NASDA-TMR-000007E},
 title = {Preparation of InGaAs starting materials having the gradient InAs concentration},
 year = {2000}
}