{"created":"2023-06-20T15:12:12.933365+00:00","id":41999,"links":{},"metadata":{"_buckets":{"deposit":"5ec049f2-f7db-48be-982f-74a1f18a8e84"},"_deposit":{"created_by":1,"id":"41999","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"41999"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00041999","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502026","502027","502025","502024","502023","502022"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"InAs濃度勾配のあるInGaAs出発物質の準備"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-09-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"59","bibliographicPageStart":"55","bibliographic_titles":[{},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"InAs濃度勾配のあるInGaAs出発物質を方向性固化法で準備した。材料は過冷却をおこすことなく、巨視的微視的になめらかな濃度分布を持っていた。成長実験のためのIn成分xが0.3の試料は、x=0.4の材料物質から切り出した。過冷却領域でのIn濃度の微視的評価は、自由核生成が成長界面の前で起こり、新たな成長界面が形成されることを示唆していた。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"InGaAs starting materials having gradient InAs concentrations were prepared by the directionally solidification method. The materials have macro and microscopically smooth concentration profile without occurrence of a constitutional supercooling. The sample having In composition (x) of 0.3 for growth experiments was cut from the source materials having x = 0.4. The microscopic evaluation of In concentration on a region of the constitutional supercooling suggests that free nucleations occur ahead of a growth interface and a new growth interface is formed.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0029300006","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-000007E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"住友電気工業 伊丹研究所"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Sumitomo Electric Industries Ltd Itami Research Laboratories"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"龍見, 雅美"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"加藤, 浩和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tatsumi, Masami","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"29300006.pdf","filesize":[{"value":"961.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"29300006.pdf","url":"https://jaxa.repo.nii.ac.jp/record/41999/files/29300006.pdf"},"version_id":"8123073f-62a9-49a9-9893-4055ab037ad9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"InGaAs","subitem_subject_scheme":"Other"},{"subitem_subject":"出発材料","subitem_subject_scheme":"Other"},{"subitem_subject":"方向性固化法","subitem_subject_scheme":"Other"},{"subitem_subject":"過冷却","subitem_subject_scheme":"Other"},{"subitem_subject":"核生成","subitem_subject_scheme":"Other"},{"subitem_subject":"成長界面","subitem_subject_scheme":"Other"},{"subitem_subject":"蛍光X線法","subitem_subject_scheme":"Other"},{"subitem_subject":"微視的にスムーズな濃度","subitem_subject_scheme":"Other"},{"subitem_subject":"In組成","subitem_subject_scheme":"Other"},{"subitem_subject":"成長実験","subitem_subject_scheme":"Other"},{"subitem_subject":"微視的評価","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"starting material","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"directional solidification method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"supercooling","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"nucleation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth interface","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"fluorescent X ray method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microscopically smooth concentration","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"In composition","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth experiment","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microscopic evaluation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Preparation of InGaAs starting materials having the gradient InAs concentration","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Preparation of InGaAs starting materials having the gradient InAs concentration","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"41999","relation_version_is_last":true,"title":["Preparation of InGaAs starting materials having the gradient InAs concentration"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:51.658917+00:00"}