{"created":"2023-06-20T15:12:12.980537+00:00","id":42000,"links":{},"metadata":{"_buckets":{"deposit":"c0f58db0-5016-4cb4-ae51-7ff3e6303a72"},"_deposit":{"created_by":1,"id":"42000","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42000"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042000","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502034","502033","502035","502036","502037","502032","502029","502030","502031","502028"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"多成分ゾーン溶融法によるIn(0.3)Ga(0.7)As種結晶の準備　2"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-09-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"64","bibliographicPageStart":"61","bibliographic_titles":[{},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"多成分ゾーン溶融法を使ったIn(0.3)Ga(0.7)As種結晶の準備が宇宙実験のために現在行われている。GaAsの種結晶と供給結晶に挟まれたInAs結晶の資料で、成長するIn(x)Ga(1-x)As結晶のx値を0.03から0.3まで増加させ、数ミリに成長するまで、0.3を維持した。今年になって、In(0.3)Ga(0.7)As単結晶の長さを4mmから6mmに伸ばすことができ、In(0.3)Ga(0.7)As層でのx値のばらつきも±0.01から±0.005にまで押さえ込むことができた。また、In(0.3)Ga(0.7)As多結晶の長さは18mmから20mmにまで伸びた。宇宙実験で使われる種結晶に要求される長さは20mmであるため、In(0.3)Ga(0.7)As単結晶の長さをさらに伸ばす必要があった。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal is increased from 0.03 to 0.3 before maintaining at 0.3 for several miilimeters of growth. As this year has progressed, the length of single crystalline In(0.3)Ga(0.7)As has been increased from 4 to 6 mm, the spread of the x value in an In(0.3)Ga(0.7)As layer reduced from +/- 0.01 to +/- 0.005, and the length of polycrystalline In(0.3)Ga(0.7)As increased from 18 to 20 mm. Since the required length of seed crystals in space experiments is 20 mm, the length of the single crystalline In(0.3)Ga(0.7)As has to be increased.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0029300007","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-000007E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"富士通研究所"},{"subitem_text_value":"富士通研究所"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Fujitsu Laboratories Ltd"},{"subitem_text_language":"en","subitem_text_value":"Fujitsu Laboratories Ltd"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"児玉, 茂夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"中村, 哲夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"加藤, 浩和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kodama, Shigeo.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, Tetsuo.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"29300007.pdf","filesize":[{"value":"276.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"29300007.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42000/files/29300007.pdf"},"version_id":"e95768c7-1f47-445a-a892-c196bc271dae"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"In(0.3)Ga(0.7)As","subitem_subject_scheme":"Other"},{"subitem_subject":"種結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"多成分ゾーン溶融法","subitem_subject_scheme":"Other"},{"subitem_subject":"供給結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"赤外線レーザダイオード","subitem_subject_scheme":"Other"},{"subitem_subject":"レーザ振動","subitem_subject_scheme":"Other"},{"subitem_subject":"Bridgman法","subitem_subject_scheme":"Other"},{"subitem_subject":"垂直勾配凍結法","subitem_subject_scheme":"Other"},{"subitem_subject":"宇宙実験","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"多結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"In(0.3)Ga(0.7)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"seed crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"multicomponent zone melting method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"feed crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"infrared laser diode","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"laser oscillation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Bridgman method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"vertical gradient freeze method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"space experiment","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"polycrystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42000","relation_version_is_last":true,"title":["In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:50.169575+00:00"}