{"created":"2023-06-20T15:12:13.074612+00:00","id":42002,"links":{},"metadata":{"_buckets":{"deposit":"48809ccc-1f33-4c1f-b1d4-7102e178c215"},"_deposit":{"created_by":1,"id":"42002","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42002"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042002","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502054","502052","502059","502053","502055","502051","502056","502050","502057","502058"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ラマン散乱を使ったIn(x)Ga(1-x)As多結晶の組成比解析"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-09-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"81","bibliographicPageStart":"77","bibliographic_titles":[{},{"bibliographic_title":"NASDA Technical Memorandum","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In(x)Ga(1-x)As基板材料はInGaAsをベースとした光電素子に対して、基板とエピタキシャル成長層の間の格子を可変的に整合させることを可能にする。しかし、組成比が空間的に一様なInGaAs基板結晶を成長させることは極めて難しい。組成比の一様性を制御する上で最も重要な要素の1つは、成長過程の出発材料として適正なものを選択することである。出発材料が適当な組成比の空間分布を持ったInGaAs多結晶であれば、均質なInGaAs基板結晶を成長させることができる可能性のあることがわかっている。従って、これらの出発材料、特にその組成比を非破壊的方法で解析することが重要になる。ここでは、これらの多結晶出発材料に対する微小ラマン散乱解析の結果を示す。色々なInGaAs多結晶のラマン散乱解析によって評価された組成比は、通常の化学的解析で調べた組成比と良く一致した。ここで紹介した微小ラマン散乱が、塊状InGaAs結晶の組成比とその空間分布を解析する、最良の非破壊的方法の1つであることが確かめられた。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"In(x)Ga(1-x)As substrate material provides a tunable lattice matching between the substrate and the epilayer for InGaAs-based optoelectronic devices. However, it is very difficult to grow InGaAS substrate crystal with a spatial homogeneity in compositional fraction. One of the most important parameters to control the homogeneity of compositional fraction is to choose a proper starting material in the growth process. It has been observed that if the starting material is polycrystalline InGaAs with a certain spatial distribution in compositional fraction, then there is a possibility that homogeneous InGaAS substrate crystal can be grown. It is important to analyze these starting materials, especially, the compositional fraction with a non-destructive method. Here, some results of micro-Raman scattering studies on the compositional fraction in these polycrystalline starting materials are presented. Compositional fractions evaluated by Raman scattering studies in various InGaAs polycrystals show good agreements with those examined by conventional chemical analysis. Micro-Raman scattering presented here is confirmed to be one of the best non-destructive methods to analyze the compositional fraction and its spatial distribution in InGaAs bulk crystals.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0029300009","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-000007E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都工芸繊維大学"},{"subitem_text_value":"京都工芸繊維大学"},{"subitem_text_value":"住友電気工業 伊丹研究所"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Kyoto Institute of Technology"},{"subitem_text_language":"en","subitem_text_value":"Kyoto Institute of Technology"},{"subitem_text_language":"en","subitem_text_value":"Sumitomo Electric Industries Ltd Itami Research Laboratories"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Verma, P."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"山田, 正良"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"龍見, 雅美"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"加藤, 浩和"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Verma, P.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamada, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tatsumi, Masami","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"29300009.pdf","filesize":[{"value":"278.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"29300009.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42002/files/29300009.pdf"},"version_id":"a61548e0-93af-4546-b23d-bb20819e3c76"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"In(x)Ga(1-x)As","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"多結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"基板","subitem_subject_scheme":"Other"},{"subitem_subject":"可変格子適合","subitem_subject_scheme":"Other"},{"subitem_subject":"エピタキシャル成長層","subitem_subject_scheme":"Other"},{"subitem_subject":"光電素子","subitem_subject_scheme":"Other"},{"subitem_subject":"基板結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"出発材料","subitem_subject_scheme":"Other"},{"subitem_subject":"ラマン散乱","subitem_subject_scheme":"Other"},{"subitem_subject":"非破壊法","subitem_subject_scheme":"Other"},{"subitem_subject":"空間的一様性","subitem_subject_scheme":"Other"},{"subitem_subject":"成分比","subitem_subject_scheme":"Other"},{"subitem_subject":"成長過程","subitem_subject_scheme":"Other"},{"subitem_subject":"塊状結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"In(x)Ga(1 minus x)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"polycrystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"substrate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"tunable lattice matching","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"epilayer","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"optoelectronic device","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"substrate crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"starting material","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Raman scattering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"nondestructive method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"spatial homogeneity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"compositional fraction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"growth process","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"bulk crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42002","relation_version_is_last":true,"title":["Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:47.572973+00:00"}