@techreport{oai:jaxa.repo.nii.ac.jp:00042544,
 author = {花上, 康宏 and 岩井, 正行 and 鶴, 哲也 and 村松, 祐治 and 木下, 恭一 and Hanaue, Yasuhiro and Iwai, Masayuki and Tsuru, Tetsuya and Muramatsu, Yuji and Kinoshita, Kyoichi},
 month = {Dec},
 note = {Newly invented "Traveling Liquidus-Zone" (TLZ) method was applied to grow In(0.3)Ga(0.7)As single crystals. Homogeneous growth conditions were confirmed experimentally though controlling temperature gradient in the liquidus-zone and accurate measurements of it should be further developed. The validity of using heat sink to improve the heat flow for realizing flat or slightly convex growth interface was also confirmed., 資料番号: AA0032602001, レポート番号: NASDA-TMR-010016E},
 title = {Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method},
 year = {2001}
}