{"created":"2023-06-20T15:12:41.126683+00:00","id":42544,"links":{},"metadata":{"_buckets":{"deposit":"f9918735-5b76-41d2-b007-0f916e5df873"},"_deposit":{"created_by":1,"id":"42544","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42544"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042544","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502133","502128","502129","502130","502132","502131","502126","502127","502134","502135"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶成長の実験研究"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-12-25","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"17","bibliographicPageStart":"13","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals"},{"bibliographic_title":"NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Newly invented \"Traveling Liquidus-Zone\" (TLZ) method was applied to grow In(0.3)Ga(0.7)As single crystals. Homogeneous growth conditions were confirmed experimentally though controlling temperature gradient in the liquidus-zone and accurate measurements of it should be further developed. The validity of using heat sink to improve the heat flow for realizing flat or slightly convex growth interface was also confirmed.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0032602001","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-010016E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究システム"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Program"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"花上, 康宏"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岩井, 正行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鶴, 哲也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hanaue, Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwai, Masayuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuru, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"32602001.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"32602001.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42544/files/32602001.pdf"},"version_id":"cca9b9e5-5f31-4d61-9be1-69d8da3b768d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"単結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"移行液相ゾーン法","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"In(sub x)Ga(sub 1-x)As","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"均質性","subitem_subject_scheme":"Other"},{"subitem_subject":"熱シンク","subitem_subject_scheme":"Other"},{"subitem_subject":"熱伝播","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"In(sub x)Ga(sub 1 minus x)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"homogeneity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"heat sink","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"heat transmission","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42544","relation_version_is_last":true,"title":["Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:35.170176+00:00"}