@techreport{oai:jaxa.repo.nii.ac.jp:00042545,
 author = {中村, 裕彦 and 花上, 康宏 and 木下, 恭一 and 依田, 真一 and Nakamura, Hirohiko and Hanaue, Yasuhiro and Kinoshita, Kyoichi and Yoda, Shinichi},
 month = {Dec},
 note = {Traveling Liquidus-Zone (TLZ) Method, which was developed by NASDA, is a powerful method to grow compositionally homogeneous semiconductor mixed crystals. Experimentally, successful results have been obtained in the laboratory. However, there was no quantitative model, which explains the homogeneous growth mechanism or the applicability of the method. In the present study, one-dimensional quantitative model of the TLZ method has been developed. Some representative results such as a synchronized sample translation rate, maximum growth length, time sequence of the liquidus zone width, and limitation of the TLZ method due to the restriction of the initial zone length, have been calculated using the model. Consequently, quantitative evaluation of TLZ growth conditions became possible., 資料番号: AA0032602002, レポート番号: NASDA-TMR-010016E},
 title = {Quantitative modeling of the traveling liquidus-zone method},
 year = {2001}
}