@techreport{oai:jaxa.repo.nii.ac.jp:00042546,
 author = {前川, 透 and 池上, 圭介 and 田所, 丈季 and 杉木, 喜洋 and 松本, 聡 and Maekawa, Toru and Ikegami, Keisuke and Tadokoro, Tomoki and Sugiki, Yoshihiro and Matsumoto, Satoshi},
 month = {Dec},
 note = {The possibility of growing a uniform InAs-GaAs binary compound semiconductor by the Traveling Liquidus Zone (TLZ) method numerically is investigated. In the first half of this report, buoyancy convection and supercooling induced in the solution are focused and in the latter half, the crystal growth process under microgravity conditions is focused. It is found that strong convection and supercooling are induced in the solution under terrestrial gravity conditions, whereas convection is reduced remarkably and an almost diffusion limited crystal growth process is realised by the TLZ method under 1 microgram conditions., 資料番号: AA0032602003, レポート番号: NASDA-TMR-010016E},
 title = {Effect of gravity-induced convection on crystal growth process},
 year = {2001}
}