{"created":"2023-06-20T15:12:41.217370+00:00","id":42546,"links":{},"metadata":{"_buckets":{"deposit":"2303b6e5-acae-4695-87f4-a578101edb5a"},"_deposit":{"created_by":1,"id":"42546","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42546"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042546","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502151","502144","502150","502146","502145","502152","502148","502149","502153","502147"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"結晶成長過程における重力に誘発される対流の影響"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-12-25","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"49","bibliographicPageStart":"41","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals"},{"bibliographic_title":"NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The possibility of growing a uniform InAs-GaAs binary compound semiconductor by the Traveling Liquidus Zone (TLZ) method numerically is investigated. In the first half of this report, buoyancy convection and supercooling induced in the solution are focused and in the latter half, the crystal growth process under microgravity conditions is focused. It is found that strong convection and supercooling are induced in the solution under terrestrial gravity conditions, whereas convection is reduced remarkably and an almost diffusion limited crystal growth process is realised by the TLZ method under 1 microgram conditions.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0032602003","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-010016E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東洋大学"},{"subitem_text_value":"東洋大学"},{"subitem_text_value":"東洋大学"},{"subitem_text_value":"東洋大学"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前川, 透"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"池上, 圭介"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"田所, 丈季"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"杉木, 喜洋"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松本, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maekawa, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ikegami, Keisuke","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tadokoro, Tomoki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sugiki, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"32602003.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"32602003.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42546/files/32602003.pdf"},"version_id":"6dc6a5ed-5e8a-4067-899c-3198a1f2caa8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"重力効果","subitem_subject_scheme":"Other"},{"subitem_subject":"浮力対流","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"移行液相ゾーン法","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"数値解析","subitem_subject_scheme":"Other"},{"subitem_subject":"熱伝導度","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gravitational effect","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"buoyancy convection","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"numerical analysis","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"thermal conductivity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Effect of gravity-induced convection on crystal growth process","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of gravity-induced convection on crystal growth process","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42546","relation_version_is_last":true,"title":["Effect of gravity-induced convection on crystal growth process"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:33.433935+00:00"}