@techreport{oai:jaxa.repo.nii.ac.jp:00042547,
 author = {弘田, 龍 and 龍見, 雅美 and 花上, 康宏 and 木下, 恭一 and Hirota, Ryu and Tatsumi, Masami and Hanaue, Yasuhiro and Kinoshita, Kyoichi},
 month = {Dec},
 note = {InGaAs starting materials for the crystal growth by the TLZ (Traveling Liquides Zone) method were prepared by the directionally solidification method. The materials have a micro- and microscopically smooth InAs concentration profile without occurrence of a constitutional supercooling. The samples having nominal In composition(x) of 0.3 were cut from the source materials having x = 0.3 - 0.4. Concerning the constitutional supercooling, an evidence for free nucleation ahead of a growth interface from a measurement of microscopic composition profile has been found., 資料番号: AA0032602004, レポート番号: NASDA-TMR-010016E},
 title = {Preparation of I[lc]nG[lc]aA[lc]s starting materials having the gradient I[lc]nA[lc]s concentration},
 year = {2001}
}