@techreport{oai:jaxa.repo.nii.ac.jp:00042548,
 author = {児玉, 茂夫 and 木下, 恭一 and 花上, 康宏 and 依田, 真一 and Kodama, Shigeo and Kinoshita, Kyoichi and Hanaue, Yasuhiro and Yoda, Shinichi},
 month = {Dec},
 note = {In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal was increased from 0.04 to 0.3 before being maintained at 0.3 for several millimeters of growth. Efforts to increase the single crystalline growth yield have been carried out this year. The appearance of poly-crystallization in the initial stages, during the stage of increasing InAs composition, and during the constant-composition growth stage were studied. Measures were taken to prevent poly-crystalline growth. The yield of single-crystalline structures was thus increased from 0.05 to 0.5. These improved conditions of growth have been used to prepare ten seed crystals for ground experiments., 資料番号: AA0032602005, レポート番号: NASDA-TMR-010016E},
 title = {I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method},
 year = {2001}
}