{"created":"2023-06-20T15:12:41.307650+00:00","id":42548,"links":{},"metadata":{"_buckets":{"deposit":"f9664fb1-1c40-4234-ab63-32218c99513a"},"_deposit":{"created_by":1,"id":"42548","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42548"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042548","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502163","502169","502166","502164","502165","502168","502162","502167"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"多成分ゾーン溶融法を用いたIn(sub 0.3)Ga(sub 0.7)As種結晶の調製"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-12-25","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"64","bibliographicPageStart":"59","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals"},{"bibliographic_title":"NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal was increased from 0.04 to 0.3 before being maintained at 0.3 for several millimeters of growth. Efforts to increase the single crystalline growth yield have been carried out this year. The appearance of poly-crystallization in the initial stages, during the stage of increasing InAs composition, and during the constant-composition growth stage were studied. Measures were taken to prevent poly-crystalline growth. The yield of single-crystalline structures was thus increased from 0.05 to 0.5. These improved conditions of growth have been used to prepare ten seed crystals for ground experiments.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0032602005","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-010016E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"富士通研究所"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究システム"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究センター"},{"subitem_text_value":"宇宙開発事業団 宇宙環境利用研究システム"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Fujitsu Laboratories Ltd."},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Program"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Center"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan Space Utilization Research Program"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"児玉, 茂夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"花上, 康宏"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kodama, Shigeo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hanaue, Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"32602005.pdf","filesize":[{"value":"626.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"32602005.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42548/files/32602005.pdf"},"version_id":"8793f8de-ca31-49b9-9b0d-949827b4e7f9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ゾーン溶融法","subitem_subject_scheme":"Other"},{"subitem_subject":"種","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶過程","subitem_subject_scheme":"Other"},{"subitem_subject":"In(sub x)Ga(sub 1-x)As","subitem_subject_scheme":"Other"},{"subitem_subject":"短結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"基板","subitem_subject_scheme":"Other"},{"subitem_subject":"均質性","subitem_subject_scheme":"Other"},{"subitem_subject":"zone melting method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"seed","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystallization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"In(sub x)Ga(sub 1 minus x)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"substrate","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"homogeneity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42548","relation_version_is_last":true,"title":["I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:25:31.497261+00:00"}