@techreport{oai:jaxa.repo.nii.ac.jp:00042841,
 author = {前川, 透 and 杉木, 喜洋 and 松本, 聡 and Maekawa, Toru and Sugiki, Yoshihiro and Matsumoto, Satoshi},
 month = {Dec},
 note = {The crystal growth process of an InAs-GaAs binary semiconductor is investigated by the Traveling Liquidus Zone (TLZ) method numerically and the possibility of growing a bulk In(0.3)Ga(0.7)As crystal is discussed. First this new crystal growth technique is reviewed and then a numerical model and calculation method of the growth of binary crystals are explained. It is focused on the effect of the solution zone width on the crystal growth process and the generation of supercooling in the solution in order to grow In0.3Ga0.7As. It is found that a uniform In(0.3)Ga(0.7)As can be grown by the TLZ method under 1 microgram conditions by adjusting the solution zone width and the temperature gradient in the solution at appropriate values., 資料番号: AA0045402002, レポート番号: NASDA-TMR-020024E},
 title = {Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions},
 year = {2002}
}