{"created":"2023-06-20T15:12:57.626818+00:00","id":42841,"links":{},"metadata":{"_buckets":{"deposit":"749a85da-f6ce-4359-88e2-f00240c37490"},"_deposit":{"created_by":1,"id":"42841","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42841"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042841","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502491","502488","502487","502490","502486","502489"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"微小重力条件下でのInAs-GaAs2成分系半導体の結晶成長の数値解析"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-12-27","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"28","bibliographicPageStart":"19","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals"},{"bibliographic_title":"NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The crystal growth process of an InAs-GaAs binary semiconductor is investigated by the Traveling Liquidus Zone (TLZ) method numerically and the possibility of growing a bulk In(0.3)Ga(0.7)As crystal is discussed. First this new crystal growth technique is reviewed and then a numerical model and calculation method of the growth of binary crystals are explained. It is focused on the effect of the solution zone width on the crystal growth process and the generation of supercooling in the solution in order to grow In0.3Ga0.7As. It is found that a uniform In(0.3)Ga(0.7)As can be grown by the TLZ method under 1 microgram conditions by adjusting the solution zone width and the temperature gradient in the solution at appropriate values.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0045402002","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-020024E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東洋大学"},{"subitem_text_value":"東洋大学"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"Toyo University"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前川, 透"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"杉木, 喜洋"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松本, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maekawa, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sugiki, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"45402002.pdf","filesize":[{"value":"666.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"45402002.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42841/files/45402002.pdf"},"version_id":"9f790bdf-92bc-4f14-ad75-d079da8dc26f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体材料","subitem_subject_scheme":"Other"},{"subitem_subject":"砒化ガリウム","subitem_subject_scheme":"Other"},{"subitem_subject":"砒化インジウム","subitem_subject_scheme":"Other"},{"subitem_subject":"数値解析","subitem_subject_scheme":"Other"},{"subitem_subject":"移動液相線ゾーン","subitem_subject_scheme":"Other"},{"subitem_subject":"微小重力","subitem_subject_scheme":"Other"},{"subitem_subject":"Boussinesq近似","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶・溶液界面","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor material","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"indium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium arsenide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"numerical analysis","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus zone","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"microgravity","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Boussinesq approximation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal-solution interface","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42841","relation_version_is_last":true,"title":["Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:24:27.343789+00:00"}