@techreport{oai:jaxa.repo.nii.ac.jp:00042844,
 author = {Islam, M. R. and Verma, P. and 山田, 正良 and 児玉, 茂夫 and 花上, 康宏 and 木下, 恭一 and Islam, M. R. and Verma, P. and Yamada, Masayoshi and Kodama, Shigeo and Hanaue, Yasuhiro and Kinoshita, Kyoichi},
 month = {Dec},
 note = {Micro-Raman scattering and photoluminescence (PL) studies were performed to understand the polycrystallization mechanism in bulk In(x)Ga(1-x)As crystal grown by the two-step multi-component zone melting (MCZM) method. Raman studies were also performed with the aim to understand the influence of residual strain on the shifts in phonon frequencies in Raman spectra. Unlike the usual observation of polycrystallization at the peripheral region of the ingot, a special polycrystallization was observed in the etching results inside the MCZM crystal. The polycrystalline region was found to have a drastic fluctuation of phonon peak positions as well as PL peak wavelength (composition) in the local region, which could be due to supercooling resulting in formation of polycrystal in the investigated crystal. Further, it is observed that the LO(sub GaAs) phonon frequency is varied for various measurement points, which may be related to the compositional variation in the samples. However, it is found from precise micro-Raman measurements both in a corner region and in a chipped region that there exists a large amount of residual strain in the samples. By comparing the observed LO(sub GaAs) phonon frequencies with those estimated from the compositions determined by the energy dispersive x-ray analysis, they are found to be shifted by about 9.5 cm(sup -1) due to residual strain, which corresponds to a strain value of the order of 10(exp -2)., 資料番号: AA0045402005, レポート番号: NASDA-TMR-020024E},
 title = {Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal},
 year = {2002}
}