{"created":"2023-06-20T15:12:57.763136+00:00","id":42844,"links":{},"metadata":{"_buckets":{"deposit":"58c18532-b547-4c84-a899-0fbe48ad37ae"},"_deposit":{"created_by":1,"id":"42844","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"42844"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00042844","sets":["1887:1893","1896:1898:1933:1934"]},"author_link":["502523","502524","502526","502520","502522","502527","502517","502516","502525","502518","502521","502519"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"バルクなIn(x)Ga(1-x)As結晶における多結晶化と残余歪みの研究"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-12-27","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"71","bibliographicPageStart":"61","bibliographic_titles":[{"bibliographic_title":"宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals"},{"bibliographic_title":"NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Micro-Raman scattering and photoluminescence (PL) studies were performed to understand the polycrystallization mechanism in bulk In(x)Ga(1-x)As crystal grown by the two-step multi-component zone melting (MCZM) method. Raman studies were also performed with the aim to understand the influence of residual strain on the shifts in phonon frequencies in Raman spectra. Unlike the usual observation of polycrystallization at the peripheral region of the ingot, a special polycrystallization was observed in the etching results inside the MCZM crystal. The polycrystalline region was found to have a drastic fluctuation of phonon peak positions as well as PL peak wavelength (composition) in the local region, which could be due to supercooling resulting in formation of polycrystal in the investigated crystal. Further, it is observed that the LO(sub GaAs) phonon frequency is varied for various measurement points, which may be related to the compositional variation in the samples. However, it is found from precise micro-Raman measurements both in a corner region and in a chipped region that there exists a large amount of residual strain in the samples. By comparing the observed LO(sub GaAs) phonon frequencies with those estimated from the compositions determined by the energy dispersive x-ray analysis, they are found to be shifted by about 9.5 cm(sup -1) due to residual strain, which corresponds to a strain value of the order of 10(exp -2).","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0045402005","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: NASDA-TMR-020024E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙開発事業団"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"National Space Development Agency of Japan (NASDA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1345-7888","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00364784","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都工芸繊維大学 工芸学部　電子情報工学科"},{"subitem_text_value":"京都工芸繊維大学 ベンチャー・ラボラトリー"},{"subitem_text_value":"京都工芸繊維大学 工芸学部　電子情報工学科"},{"subitem_text_value":"富士通研究所"},{"subitem_text_value":"宇宙開発事業団"},{"subitem_text_value":"宇宙開発事業団"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Kyoto Institute of Technology Dept. of Electronics and Information Science, Faculty of Engineering and Design"},{"subitem_text_language":"en","subitem_text_value":"Kyoto Institute of Technology Venture Laboratory"},{"subitem_text_language":"en","subitem_text_value":"Kyoto Institute of Technology Dept. of Electronics and Information Science, Faculty of Engineering and Design"},{"subitem_text_language":"en","subitem_text_value":"Fujitsu Laboratories Ltd."},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"},{"subitem_text_language":"en","subitem_text_value":"National Space Development Agency of Japan"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Islam, M. R."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Verma, P."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"山田, 正良"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"児玉, 茂夫"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"花上, 康宏"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Islam, M. R.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Verma, P.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamada, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kodama, Shigeo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hanaue, Yasuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-10"}],"displaytype":"detail","filename":"45402005.pdf","filesize":[{"value":"5.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"45402005.pdf","url":"https://jaxa.repo.nii.ac.jp/record/42844/files/45402005.pdf"},"version_id":"ad60b5e3-f319-4200-b663-483a31fb88a7"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"In(x)Ga(1-x)As","subitem_subject_scheme":"Other"},{"subitem_subject":"多結晶化","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"残余歪み","subitem_subject_scheme":"Other"},{"subitem_subject":"Raman散乱","subitem_subject_scheme":"Other"},{"subitem_subject":"フォトルミネッセンス","subitem_subject_scheme":"Other"},{"subitem_subject":"多成分ゾーンメルティング","subitem_subject_scheme":"Other"},{"subitem_subject":"In(x)Ga(1-x)As","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"polycrystallization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"residual strain","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Raman scattering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"multicomponent zone melting","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1893","1934"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"42844","relation_version_is_last":true,"title":["Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-20T20:24:23.710192+00:00"}