@techreport{oai:jaxa.repo.nii.ac.jp:00042957,
 author = {鶴, 哲也 and 岩井, 正行 and 村松, 祐治 and 木下, 恭一 and 緒方, 康行 and 足立, 聡 and 越川, 尚清 and 依田, 真一 and Tsuru, Tetsuya and Iwai, Masayuki and Muramatsu, Yuji and Kinoshita, Kyoichi and Ogata, Yasuyuki and Adachi, Satoshi and Koshikawa, Naokiyo and Yoda, Shinichi},
 month = {Aug},
 note = {The TLZ (Traveling Liquidus-Zone) method has been invented as a new crystal growth method, which enables growing compositionally homogeneous mixed crystals of In(x)Ga(1-x)As (X:0.3). In this study, examined was the relation between sample translation rates and compositions of grown crystals, and the TLZ growth model was verified. In addition, the effects of temperature gradient were examined. The growth of a long homogeneous crystal was tried. As a result, a homogeneous crystal was obtained at the sample translation rate in accordance with that calculated from the TLZ growth model. It was not successful to grow homogeneous crystals at other sample translation rates. Also succeeded was a homogeneous crystal growth at another temperature gradient, and a 60 mm long homogeneous crystal longer than those crystals was obtained so far. It was thus verified that the TLZ growth model can be applied to the real crystal growth, and accuracy of the model prediction was confirmed., 資料番号: AA0046981001, レポート番号: NASDA-TMR-030006E},
 title = {Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method},
 year = {2003}
}