@techreport{oai:jaxa.repo.nii.ac.jp:00042958,
 author = {木下, 恭一 and 緒方, 康行 and 越川, 尚清 and 足立, 聡 and 岩井, 正行 and 鶴, 哲也 and 村松, 祐治 and 杉木, 喜洋 and 前川, 透 and 依田, 真一 and Kinoshita, Kyoichi and Ogata, Yasuyuki and Koshikawa, Naokiyo and Adachi, Satoshi and Iwai, Masayuki and Tsuru, Tetsuya and Muramatsu, Yuji and Sugiki, Yoshihiro and Maekawa, Toru and Yoda, Shinichi},
 month = {Aug},
 note = {The critical freezing rate for avoiding the constitutional supercooling in the crystal growth of In(x)Ga(1-x)As from its melt has been investigated quantitatively and it is found that the critical freezing rate is between 0.25 and 0.28 mm/h at a temperature gradient in the melt of 10 C/cm when the convection is suppressed. Since the critical freezing rate that is calculated by the criteria reported by Tiller et al. in the diffusion limited growth is 0.22 mm/h at 10 C/cm, it can be said that tolerance for the constitutional supercooling exists. When convection in the melt existed, the critical freezing rate for avoiding the constitutional supercooling was reduced below the Tiller's criteria. Local inhomogeneity in the melt caused by convection might increase the local constitutional supercooling even at lower growth rate. The quantitative study on the effect of convection for the constitutional supercooling in a semiconductor crystal growth is the first time., 資料番号: AA0046981002, レポート番号: NASDA-TMR-030006E},
 title = {Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As},
 year = {2003}
}