@techreport{oai:jaxa.repo.nii.ac.jp:00042959,
 author = {前川, 透 and 福田, 尚宏 and 松本, 聡 and 足立, 聡 and 依田, 真一 and 木下, 恭一 and Maekawa, Toru and Fukuda, Takahiro and Matsumoto, Satoshi and Adachi, Satoshi and Yoda, Shinichi and Kinoshita, Kyoichi},
 month = {Aug},
 note = {The crystal growth process of an InAs-GaAs binary semiconductor by the Traveling Liquidus-Zone (TLZ) method is investigated under terrestrial gravitational conditions numerically and the effect of the angle between the crystal growth direction and the gravity direction on the crystal growth process is discussed. First, this new crystal growth technique is explained and then a numerical mode and calculation method of the growth of binary crystals are developed, by which the flow field in the solution, the temperature and concentration fields in both the solution and crystals, and the shape and movement of the crystal-solution interfaces are determined. Focused is, in particular, the effect of the crystal size and the inclination angle on the crystal growth process. It is found that 1) When the crystal size is 2 mm, convection is reduced and the concentration field is not seriously deformed as long as the inclination angle is less than 1 degree. The degree of supercooling is remarkably reduced compared to the case when crystals are grown in the horizontal direction; 2) When the crystal size is greater than 5 mm, convection is intensified and the concentration field is seriously deformed. The degree of supercooling is increased as the inclination angle increases. The above results show that growing single crystals under terrestrial gravitational conditions are very difficult if the crystal size is greater than 5 mm., 資料番号: AA0046981003, レポート番号: NASDA-TMR-030006E},
 title = {Crystal growth of an InAs-GaAs binary semiconductor under terrestrial gravitational conditions},
 year = {2003}
}