@inproceedings{oai:jaxa.repo.nii.ac.jp:00004301,
 author = {Sugiyama, M. and Sharon, L. J. and Sakakura, H. and Hirose, Y. and Tsunoda, I. and Takakura, K and Sugiyama, M. and Sharon, L. J. and Sakakura, H. and Hirose, Y. and Tsunoda, I. and Takakura, K},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {The optical and electrical properties of proton irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the thin films that compose the CIGS solar cell structure were investigated. The transmittance and resistivity of transparent conducting oxide window layers remained constant for a fluence of up to 3 × 10(exp 15) cm(exp -2). For CIGS thin films, the number of non-radiative recombination center increases under proton irradiation. In CIGS solar cells, decreasing JSC reflected the degradation of the depletion layer of the CdS/CIGS interface. These results constitute the first step in clarifying the degradation mechanism of CIGS solar cells., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889007, レポート番号: JAXA-SP-12-008E},
 pages = {38--41},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Impacts of proton irradiation on optical and electrical properties of Cu(In,Ga)Se2 thin films and solar cells},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}