@inproceedings{oai:jaxa.repo.nii.ac.jp:00004303,
 author = {Sato, Shinichiro and Beernink, Kevin and Oshima, Takeshi and Sato, Shinichiro and Beernink, Kevin and Oshima, Takeshi},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {Degradation behavior of a-Si/a-SiGe/a-SiGe triple-junction solar cells irradiated with various energy protons are investigated in situ. It is clarified that the degradation due to proton irradiation is scaled by a unit of displacement damaged dose and thus the proton induced degradation is mainly caused by the displacement damage effect. The performance recoveries immediately after irradiation are also investigated and it is clarified that all the parameters recover significantly at room temperature. In particular, the remarkable recovery is observed in the short circuit current. This is thought to be due to recovery of the carrier lifetime, which is based on annealing of radiation defects., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889009, レポート番号: JAXA-SP-12-008E},
 pages = {46--49},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Proton Irradiation Effects on Amorphous Silicon Triple-Junction Solar Cells},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}