@inproceedings{oai:jaxa.repo.nii.ac.jp:00004305,
 author = {Kawakita, S. and Imaizumi, M. and Ishizuka, S. and Shibata, H. and Niki, S. and Okuda, S. and Kusawake, H. and Kawakita, S. and Imaizumi, M. and Ishizuka, S. and Shibata, H. and Niki, S. and Okuda, S. and Kusawake, H.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {Electrons with energy of 250keV introduce copper-related defects. The cells were irradiated with the electrons at below 150 K because the radiation defects could be recovered with a thermal annealing effect. The carrier density increased with increasing electron fluence. The electrons can generate Cu-related Frenkel-pairs. Copper vacancy could result in increased carrier density since the shallow acceptor level VCu is assumed to be the main defect in the CIGS absorbing layer. In contrast, a drop in the carrier density of CIGS solar cells irradiated with 1MeV electrons has been reported. In addition, activation energies of defects induced by 250 keV electrons with thermal annealing differ from those by 1MeV electrons. These results indicates that copper-related defects in CIGS induced by radiation do not degrade the CIGS solar cells．, 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889011, レポート番号: JAXA-SP-12-008E},
 pages = {54--56},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Effect of 250keV Electron Irradiation on Properties of CIGS Thin-Film Solar Cells},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}