@inproceedings{oai:jaxa.repo.nii.ac.jp:00004307,
 author = {Iwamoto, N. and Johnson, B. C. and Oshima, T. and Hoshino, N. and Ito, M. and Tsuchida, H. and Iwamoto, N. and Johnson, B. C. and Oshima, T. and Hoshino, N. and Ito, M. and Tsuchida, H.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {Thermal annealing effects on the charge collection efficiency (CCE) of an electron-irradiated4H silicon carbide Schottky barrier diode (SBD) particle detector have been studied.The CCE of the SBD detector is degraded by 1 MeV electrons with a fluence of 1×10(exp15) cm(exp-2). The degraded CCE recovers with low temperature annealing up to 300C. However, CCE starts to decrease again by annealing at 350C. Conventional electrical characterization such as current and capacitance vs voltage measurements, deep level transient spectroscopy used to understand the CCE variation on annealing is discussed., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889013, レポート番号: JAXA-SP-12-008E},
 pages = {64--67},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Annealing Effects on Charge Collection Efficiency of an Electron Irradiated 4H-SiC Particle Detector},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}