@inproceedings{oai:jaxa.repo.nii.ac.jp:00004308,
 author = {Makino, T. and Deki, M. and Iwamoto, N. and Onoda, S. and Hoshino, N. and Tsuchida, H. and Oshima, T. and Makino, T. and Deki, M. and Iwamoto, N. and Onoda, S. and Hoshino, N. and Tsuchida, H. and Oshima, T.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {Heavy ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). This result is a new process of Single Event Burnouts (SEBs) in the case of incident ions on SiC-SBDs. It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is key to understanding this observation and understanding the SEB mechanism., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889014, レポート番号: JAXA-SP-12-008E},
 pages = {68--71},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Heavy-Ion Induced Charge Enhancement in 4H-SiC Schottky Barrier Diodes},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}