{"created":"2023-06-20T14:37:51.614987+00:00","id":4308,"links":{},"metadata":{"_buckets":{"deposit":"3b152c5e-a697-448a-bbe5-5eee953e0e09"},"_deposit":{"created_by":1,"id":"4308","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4308"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004308","sets":["1887:1891","9:789:888:898"]},"author_link":["18985","18983","18986","18987","18978","18981","18988","18980","18989","18977","18976","18984","18982","18979"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"71","bibliographicPageStart":"68","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Heavy ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). This result is a new process of Single Event Burnouts (SEBs) in the case of incident ions on SiC-SBDs. It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is key to understanding this observation and understanding the SEB mechanism.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889014","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency 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(JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Central Research Institute of Electric Power Industry (CRIEPI)"},{"subitem_text_language":"en","subitem_text_value":"Central Research Institute of Electric Power Industry (CRIEPI)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Makino, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Deki, M."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwamoto, N."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hoshino, N."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuchida, H."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Deki, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwamoto, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hoshino, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuchida, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"61889014.pdf","filesize":[{"value":"286.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889014.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4308/files/61889014.pdf"},"version_id":"7bf762e7-0f06-480c-bc09-eba27bfc8ffd"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Charge enhancement","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Heavy-Ion","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Silicon Carbide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Single Event Burnout","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Heavy-Ion Induced Charge Enhancement in 4H-SiC Schottky Barrier Diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Heavy-Ion Induced Charge Enhancement in 4H-SiC Schottky Barrier Diodes","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4308","relation_version_is_last":true,"title":["Heavy-Ion Induced Charge Enhancement in 4H-SiC Schottky Barrier Diodes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:42:47.898470+00:00"}