@inproceedings{oai:jaxa.repo.nii.ac.jp:00004310,
 author = {Zhang, Jin-Xin and Guo, Hong-Xia and Wen, Lin and Guo, Qi and Lu, Wu and Cui, Jiang-Wei and Wang, Xin and Deng, Wei and Zhen, Qi-Wen and Xiao, Yao and Fan, Xue and Zhang, Jin-Xin and Guo, Hong-Xia and Wen, Lin and Guo, Qi and Lu, Wu and Cui, Jiang-Wei and Wang, Xin and Deng, Wei and Zhen, Qi-Wen and Xiao, Yao and Fan, Xue},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {This paper presents 3-D simulation of angled strike heavy ion induced charge collection in Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). We select several different striking angles at various typical ion strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Angled strike ions induced charge collection present complex situation. With the change of striking angle, the longer the length of the ions track in sensitive volume, the more charge is collected. STI will prevent a part of diffused charge that charge collection reduces., 形態: カラー図版あり, 著者人数: 11名, Physical characteristics: Original contains color illustrations, Number of authors: 11, 資料番号: AA0061889016, レポート番号: JAXA-SP-12-008E},
 pages = {76--79},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}