{"created":"2023-06-20T14:37:51.745555+00:00","id":4310,"links":{},"metadata":{"_buckets":{"deposit":"c321cb78-5d0b-4fa6-9e14-a5b7eeadbe0c"},"_deposit":{"created_by":1,"id":"4310","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4310"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004310","sets":["1887:1891","9:789:888:898"]},"author_link":["19028","19013","19030","19029","19021","19018","19033","19012","19032","19017","19027","19014","19026","19016","19025","19031","19024","19022","19020","19015","19023","19019"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"79","bibliographicPageStart":"76","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"This paper presents 3-D simulation of angled strike heavy ion induced charge collection in Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). We select several different striking angles at various typical ion strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Angled strike ions induced charge collection present complex situation. With the change of striking angle, the longer the length of the ions track in sensitive volume, the more charge is collected. STI will prevent a part of diffused charge that charge collection reduces.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"},{"subitem_description":"著者人数: 11名","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"},{"subitem_description":"Number of authors: 11","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889016","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_value":"Northwest Institution of Nuclear Technology"},{"subitem_text_value":"State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Northwest Institution of Nuclear Technology"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_language":"en","subitem_text_value":"Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences"},{"subitem_text_language":"en","subitem_text_value":"Northwest Institution of Nuclear Technology"},{"subitem_text_language":"en","subitem_text_value":"State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhang, Jin-Xin"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Guo, Hong-Xia"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wen, Lin"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Guo, Qi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Lu, Wu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Cui, Jiang-Wei"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wang, Xin"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Deng, Wei"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Zhen, Qi-Wen"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Xiao, Yao"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fan, Xue"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Zhang, Jin-Xin","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Guo, Hong-Xia","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wen, Lin","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Guo, Qi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Lu, Wu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Cui, Jiang-Wei","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wang, Xin","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Deng, Wei","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Zhen, Qi-Wen","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Xiao, Yao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fan, Xue","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"61889016.pdf","filesize":[{"value":"338.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889016.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4310/files/61889016.pdf"},"version_id":"04d47c2d-c63c-4c17-950e-1f8a2a27fc7e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiGe HBT","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Angled strike","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SEE","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Charge collection","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"3-D numerical simulation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4310","relation_version_is_last":true,"title":["3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:42:43.989478+00:00"}