@inproceedings{oai:jaxa.repo.nii.ac.jp:00004311,
 author = {Deki, Manato and Makino, Takahiro and Tomita, Takuro and Hashimoto, Shuichi and Kojima, Kazutoshi and Oshima, Takeshi and Deki, Manato and Makino, Takahiro and Tomita, Takuro and Hashimoto, Shuichi and Kojima, Kazutoshi and Oshima, Takeshi},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {The currents through the gate oxide of the 4H-Silicon Carbide (SiC) Metal Oxide Semiconductor (MOS) capacitors at the accumulate condition were measured during heavy ion irradiation. Linear Energy Transfer (LET) dependence of the critical electric field (Ecr) at which the dielectric breakdown occurs in 4H-SiC MOS capacitors was studied. It was revealed that Ecr decreases with increasing LET. Ecr for SiC became higher than that for Si. This suggests that SiC MOS devices are promising candidates for high SEGR resistant devices., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889017, レポート番号: JAXA-SP-12-008E},
 pages = {80--83},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {LET Dependence of Gate Oxide Breakdown of SiC MOS Capacitors due to Single Heavy Ion Irradiation},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}