{"created":"2023-06-20T14:37:51.810401+00:00","id":4311,"links":{},"metadata":{"_buckets":{"deposit":"b1fa752e-524d-46b1-a84a-6d7103c20c5a"},"_deposit":{"created_by":1,"id":"4311","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4311"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004311","sets":["1887:1891","9:789:888:898"]},"author_link":["19045","19035","19043","19041","19038","19042","19044","19034","19040","19036","19037","19039"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"83","bibliographicPageStart":"80","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The currents through the gate oxide of the 4H-Silicon Carbide (SiC) Metal Oxide Semiconductor (MOS) capacitors at the accumulate condition were measured during heavy ion irradiation. Linear Energy Transfer (LET) dependence of the critical electric field (Ecr) at which the dielectric breakdown occurs in 4H-SiC MOS capacitors was studied. It was revealed that Ecr decreases with increasing LET. Ecr for SiC became higher than that for Si. This suggests that SiC MOS devices are promising candidates for high SEGR resistant devices.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889017","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"徳島大学 : 日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"徳島大学"},{"subitem_text_value":"徳島大学"},{"subitem_text_value":"産業技術総合研究所"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"University of Tokushima : Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA),"},{"subitem_text_language":"en","subitem_text_value":"The University of Tokushima"},{"subitem_text_language":"en","subitem_text_value":"The University of Tokushima"},{"subitem_text_language":"en","subitem_text_value":"National Institute of Advanced Industrial Science and Technology (AIST)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA),"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Deki, Manato"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tomita, Takuro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hashimoto, Shuichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kojima, Kazutoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Deki, Manato","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tomita, Takuro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hashimoto, Shuichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kojima, Kazutoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"61889017.pdf","filesize":[{"value":"420.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889017.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4311/files/61889017.pdf"},"version_id":"d1a59a1e-6bf1-4aec-a0ff-70448aed026d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Metal-oxide-semiconductor capacitor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Single event gate rupture","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"LET Dependence of Gate Oxide Breakdown of SiC MOS Capacitors due to Single Heavy Ion Irradiation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"LET Dependence of Gate Oxide Breakdown of SiC MOS Capacitors due to Single Heavy Ion Irradiation","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4311","relation_version_is_last":true,"title":["LET Dependence of Gate Oxide Breakdown of SiC MOS Capacitors due to Single Heavy Ion Irradiation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:42:41.879098+00:00"}