@inproceedings{oai:jaxa.repo.nii.ac.jp:00004312,
 author = {Nakashima, T. and Asai, Y. and Hori, M. and Yoneoka, M. and Tsunoda, I. and Takakura, T. and Gonzalez, M. B. and Simoen, E. and Claeys, C. and Yoshino, K. and Nakashima, T. and Asai, Y. and Hori, M. and Yoneoka, M. and Tsunoda, I. and Takakura, T. and Gonzalez, M. B. and Simoen, E. and Claeys, C. and Yoshino, K.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {The 2-MeV electron radiation damage of Si(1-y)C(y) S/D n-type MOSFETs with different C concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences. These results indicate that the strain induced electron mobility enhancement due to C concentration is retained after irradiation in the studied devices., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889018, レポート番号: JAXA-SP-12-008E},
 pages = {84--87},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Radiation damage of Si(1-y)C(y) Source/Drain n-MOSFETs with different carbon concentrations},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}