@inproceedings{oai:jaxa.repo.nii.ac.jp:00004319,
 author = {Hazama, Masatoshi and Abo, Satoshi and Masuda, Naoyuki and Wakaya, Fujio and Onoda, Shinobu and Makino, Takahiro and Hirao, Toshio and Oshima, Takeshi and Iwamatsu, Toshiaki and Oda, Hidekazu and Takai, Mikio and Hazama, Masatoshi and Abo, Satoshi and Masuda, Naoyuki and Wakaya, Fujio and Onoda, Shinobu and Makino, Takahiro and Hirao, Toshio and Oshima, Takeshi and Iwamatsu, Toshiaki and Oda, Hidekazu and Takai, Mikio},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {Soft error rates (SERs) in partially depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm have been investigated by hydrogen, helium, lithium, beryllium, carbon and oxygen ions, accelerated up to a few tens of MeV using a tandem accelerator. The SERs increased with increasing the amount of the generated charge in the SOI body by a floating body effect, even if the amount of the generated charge was less than the critical charge. The SERs with the generated charge in the SOI body more than the critical charge were almost constant., 形態: 図版あり, 著者人数: 11名, Physical characteristics: Original contains illustrations, Number of authors: 11, 資料番号: AA0061889025, レポート番号: JAXA-SP-12-008E},
 pages = {119--122},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}