{"created":"2023-06-20T14:37:52.314812+00:00","id":4319,"links":{},"metadata":{"_buckets":{"deposit":"66809f9a-b4ed-4f3b-968a-1aa29a60d5f2"},"_deposit":{"created_by":1,"id":"4319","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4319"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004319","sets":["1887:1891","9:789:888:898"]},"author_link":["19117","19114","19113","19128","19125","19124","19115","19127","19110","19123","19129","19109","19121","19122","19119","19120","19116","19111","19112","19108","19118","19126"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"122","bibliographicPageStart":"119","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"Soft error rates (SERs) in partially depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm have been investigated by hydrogen, helium, lithium, beryllium, carbon and oxygen ions, accelerated up to a few tens of MeV using a tandem accelerator. The SERs increased with increasing the amount of the generated charge in the SOI body by a floating body effect, even if the amount of the generated charge was less than the critical charge. The SERs with the generated charge in the SOI body more than the critical charge were almost constant.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: 図版あり","subitem_description_type":"Other"},{"subitem_description":"著者人数: 11名","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains illustrations","subitem_description_type":"Other"},{"subitem_description":"Number of authors: 11","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889025","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"大阪大学極限量子科学研究センター"},{"subitem_text_value":"大阪大学極限量子科学研究センター"},{"subitem_text_value":"大阪大学極限量子科学研究センター"},{"subitem_text_value":"大阪大学極限量子科学研究センター"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"ルネサス エレクトロニクス株式会社"},{"subitem_text_value":"ルネサス エレクトロニクス株式会社"},{"subitem_text_value":"大阪大学極限量子科学研究センター"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Center for Quantum Science and Technology under Extreme Conditions, Osaka University"},{"subitem_text_language":"en","subitem_text_value":"Center for Quantum Science and Technology under Extreme Conditions, Osaka University"},{"subitem_text_language":"en","subitem_text_value":"Center for Quantum Science and Technology under Extreme Conditions, Osaka University"},{"subitem_text_language":"en","subitem_text_value":"Center for Quantum Science and Technology under Extreme Conditions, Osaka University"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Renesas Electronics Corporation"},{"subitem_text_language":"en","subitem_text_value":"Renesas Electronics Corporation"},{"subitem_text_language":"en","subitem_text_value":"Center for Quantum Science and Technology under Extreme Conditions, Osaka University"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hazama, Masatoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Abo, Satoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Masuda, Naoyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wakaya, Fujio"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirao, Toshio"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwamatsu, Toshiaki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oda, Hidekazu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takai, Mikio"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hazama, Masatoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Abo, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Masuda, Naoyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wakaya, Fujio","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirao, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iwamatsu, Toshiaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oda, Hidekazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takai, Mikio","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"61889025.pdf","filesize":[{"value":"205.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889025.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4319/files/61889025.pdf"},"version_id":"31ba834b-2790-4288-98c3-3766f80e8696"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"silicon-on-insulator (SOI)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"soft error","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"floating body effect","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"body-tie structure","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"nuclear microprobe","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4319","relation_version_is_last":true,"title":["Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:42:26.674042+00:00"}