@inproceedings{oai:jaxa.repo.nii.ac.jp:00004322,
 author = {Ogura, S. and Komiyama, T. and Takahashi, Y. and Makino, T. and Onoda, S. and Hirao, T. and Oshima, T. and Ogura, S. and Komiyama, T. and Takahashi, Y. and Makino, T. and Onoda, S. and Hirao, T. and Oshima, T.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {We have investigated the transient current in a SOI p+n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889028, レポート番号: JAXA-SP-12-008E},
 pages = {131--133},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Suppression of Heavy-Ion induced Current in SOI Device},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}