{"created":"2023-06-20T14:37:52.509967+00:00","id":4322,"links":{},"metadata":{"_buckets":{"deposit":"8532a4e2-fda0-4a34-9fcc-d7db72c441be"},"_deposit":{"created_by":1,"id":"4322","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4322"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004322","sets":["1887:1891","9:789:888:898"]},"author_link":["19172","19168","19170","19173","19166","19171","19177","19178","19169","19174","19167","19175","19176","19179"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"133","bibliographicPageStart":"131","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"We have investigated the transient current in a SOI p+n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889028","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"日本大学"},{"subitem_text_value":"日本大学"},{"subitem_text_value":"日本大学"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"},{"subitem_text_value":"日本原子力研究開発機構(JAEA)"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Nihon University"},{"subitem_text_language":"en","subitem_text_value":"Nihon University"},{"subitem_text_language":"en","subitem_text_value":"Nihon University"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"},{"subitem_text_language":"en","subitem_text_value":"Japan Atomic Energy Agency (JAEA)"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ogura, S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Komiyama, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takahashi, Y."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirao, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogura, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Komiyama, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takahashi, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Makino, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Onoda, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirao, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oshima, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"61889028.pdf","filesize":[{"value":"160.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889028.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4322/files/61889028.pdf"},"version_id":"c3c4b1f5-55d5-49cf-859f-3727372ee0aa"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SET","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SOI","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SEE tolerance device","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Displacement current","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Suppression of Heavy-Ion induced Current in SOI Device","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Suppression of Heavy-Ion induced Current in SOI Device","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4322","relation_version_is_last":true,"title":["Suppression of Heavy-Ion induced Current in SOI Device"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:42:20.660346+00:00"}