@inproceedings{oai:jaxa.repo.nii.ac.jp:00004324,
 author = {Wang, Pierre-Xiao and Berthet, P-E and Gouyet, L. and Rousset, A. and Vandevelde, B. and Wang, Pierre-Xiao and Berthet, P-E and Gouyet, L. and Rousset, A. and Vandevelde, B.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {This paper summarizes SEE test results on Micron 4Gb and Samsung 8Gb Nand Flash device focusing on High Current Events and Function Failure resulting from radiation events., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889030, レポート番号: JAXA-SP-12-008E},
 pages = {138--141},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {SEE Tests of the 4Gb and 8Gb Nand Flash},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}