@inproceedings{oai:jaxa.repo.nii.ac.jp:00004325,
 author = {Kuboyama, S. and Mizuta, E. and Ikeda, N. and Abe, H. and Ohshima, T. and Tamura, T. and Kuboyama, S. and Mizuta, E. and Ikeda, N. and Abe, H. and Ohshima, T. and Tamura, T.},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889031, レポート番号: JAXA-SP-12-008E},
 pages = {142--145},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Consideration of Single-Event Gate Rupture Mechanism in Power MOSFET},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}