{"created":"2023-06-20T14:37:52.704720+00:00","id":4325,"links":{},"metadata":{"_buckets":{"deposit":"82b3d12a-8a39-4ede-b710-3d20e9570e09"},"_deposit":{"created_by":1,"id":"4325","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4325"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004325","sets":["1887:1891","9:789:888:898"]},"author_link":["19204","19202","19210","19200","19208","19206","19203","19207","19209","19205","19201","19211"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"145","bibliographicPageStart":"142","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889031","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency 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kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889031.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4325/files/61889031.pdf"},"version_id":"7798becd-0e24-40da-991c-94eabb2c597b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Power MOSFETs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SEGR","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Heavy ions","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single-event effects","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"radiation damage","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Consideration of Single-Event Gate Rupture Mechanism in Power MOSFET","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Consideration of Single-Event Gate Rupture Mechanism in Power MOSFET","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4325","relation_version_is_last":true,"title":["Consideration of Single-Event Gate Rupture Mechanism in Power MOSFET"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:42:14.924789+00:00"}