@inproceedings{oai:jaxa.repo.nii.ac.jp:00004329,
 author = {Asai, Hiroaki and Sugimoto, Kenji and Nashiyama, Isamu and Shiba, Kensuke and Matsuda, Mieko and Morimura, Tadaaki and Asai, Hiroaki and Sugimoto, Kenji and Nashiyama, Isamu and Shiba, Kensuke and Matsuda, Mieko and Morimura, Tadaaki},
 book = {宇宙航空研究開発機構特別資料, JAXA Special Publication},
 month = {Mar},
 note = {Terrestrial neutrons cause single-event effects (SEEs) in semiconductor devices, which crucially affect the reliability of electronic systems used in the terrestrial environment. This paper presents evaluation results of high energy neutron-induced single-event burnout (SEB) in silicon carbide (SiC) power diodes and differences between SiC and silicon (Si) devices from the SEB standpoint., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889035, レポート番号: JAXA-SP-12-008E},
 pages = {162--165},
 publisher = {宇宙航空研究開発機構(JAXA), Japan Aerospace Exploration Agency (JAXA)},
 title = {Evaluation of SiC Power Diodes against Terrestrial Neutron-Induced Failure at Ground Level},
 volume = {JAXA-SP-12-008E},
 year = {2013}
}