{"created":"2023-06-20T14:37:53.290428+00:00","id":4334,"links":{},"metadata":{"_buckets":{"deposit":"65ebeeea-dd3c-45a6-bbaa-8c9f9161d88a"},"_deposit":{"created_by":1,"id":"4334","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"4334"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00004334","sets":["1887:1891","9:789:888:898"]},"author_link":["19302","19301","19303","19307","19308","19299","19304","19306","19305","19300"],"item_5_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-03-29","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"192","bibliographicPageStart":"189","bibliographicVolumeNumber":"JAXA-SP-12-008E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication","bibliographic_titleLang":"en"}]}]},"item_5_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The radiation tolerance by 2 MeV electrons irradiated to the commercial-off-the-shelf (COTS) p- and n-JFETs was studied. For the situation of p-JFET, the drain current (ID) of the input characteristics decreased by electron irradiation. The ID decreasing attributed to the increase of channel resistance by electron irradiation. In contrast, for n-JFET, the ID decreases at the fluence lower than 1x10(exp15) e/cm2, then the ID increases at the fluence higher than 5x10(exp15) e/cm2. The anomalous ID behavior of n-JFET could be explained by considering extending and narrowing of the n-channel.","subitem_description_type":"Other"}]},"item_5_description_18":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"形態: カラー図版あり","subitem_description_type":"Other"}]},"item_5_description_19":{"attribute_name":"内容記述（英）","attribute_value_mlt":[{"subitem_description":"Physical characteristics: Original contains color illustrations","subitem_description_type":"Other"}]},"item_5_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0061889040","subitem_description_type":"Other"}]},"item_5_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-12-008E","subitem_description_type":"Other"}]},"item_5_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構(JAXA)"}]},"item_5_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_5_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_5_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"熊本高等専門学校"},{"subitem_text_value":"熊本高等専門学校"},{"subitem_text_value":"熊本高等専門学校"},{"subitem_text_value":"熊本高等専門学校"},{"subitem_text_value":"中央電子工業株式会社 : 宮崎大学"}]},"item_5_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Kumamoto National College of Technology"},{"subitem_text_language":"en","subitem_text_value":"Kumamoto National College of Technology"},{"subitem_text_language":"en","subitem_text_value":"Kumamoto National College of Technology"},{"subitem_text_language":"en","subitem_text_value":"Kumamoto National College of Technology"},{"subitem_text_language":"en","subitem_text_value":"Chuo Denshi Kogyo co., Ltd. : University of Miyazaki"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takakura, K."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakiyama, S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsunoda, I."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoneoka, M."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakashima, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takakura, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakiyama, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsunoda, I.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoneoka, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakashima, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"61889040.pdf","filesize":[{"value":"425.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"61889040.pdf","url":"https://jaxa.repo.nii.ac.jp/record/4334/files/61889040.pdf"},"version_id":"d32a98a0-843e-4550-9508-90a4e7ef5748"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"COTS device","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"electron irradiation degradation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"junction field effect transistor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"electrical","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Difference of radiation tolerance with p-and n-type JFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Difference of radiation tolerance with p-and n-type JFETs","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["898","1891"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"4334","relation_version_is_last":true,"title":["Difference of radiation tolerance with p-and n-type JFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:41:55.682411+00:00"}