@techreport{oai:jaxa.repo.nii.ac.jp:00005991,
 author = {小林, 大輔 and 福田, 盛介 and 廣瀬, 和之 and 齋藤, 宏文 and Kobayashi, Daisuke and Fukuda, Seisuke and Hirose, Kazuyuki and Saito, Hirobumi},
 month = {Nov},
 note = {This paper describes a brief overview and research results of ISAS/MHI (Mitsubishi Heavy Industries) space-application microelectronics development project. The collaboration between ISAS and MHI have been developing radiation hardened VLSI components with a 0.2-micrometer fully-depleted silicon-on-insulator technology, and provides them as basic design units called standard cells. Chip designers can create various types of radiation hardened VLSI (Very Large Scale Integration) chips optimized for space research missions by properly combining the standard cells as they design conventional VLSI chips. The collaboration has also established an economically-efficient chip fabrication system. In FY2005, high-performance circuits have been included in the ISAS/MHI standard cells to realize high-performance space-application-specific microelectronics like a radiation hardened microprocessor with its operating frequency exceeding 100 MHz., 資料番号: AA0049500007, レポート番号: JAXA-SP-06-006},
 title = {SOIデバイスを用いた宇宙用半導体部品の開発},
 year = {2006}
}