@techreport{oai:jaxa.repo.nii.ac.jp:00006021,
 author = {久田, 安正 and 藤田, 辰人 and Hisada, Yasumasa and Fujita, Tatsuhito},
 month = {Nov},
 note = {One of the SSPS Type is the microwave based power transmission (MPT) system: 'M-SSPS' For the M-SSPS, Hi-power and Hi-efficiency semiconductor device are need. In this paper, we describe R & D Program of GaN semiconductor device and the first test result of GaN semiconductor devices for M-SSPS., 資料番号: AA0049500037, レポート番号: JAXA-SP-06-006},
 title = {SSPS用高効率・高出力半導体デバイスの試作結果:宇宙エネルギー利用システムの研究},
 year = {2006}
}