@techreport{oai:jaxa.repo.nii.ac.jp:00006041,
 author = {森岡, 千晴 and 今泉, 充 and 岐部, 公一 and Morioka, Chiharu and Imaizumi, Mitsuru and Kibe, Koichi},
 month = {Nov},
 note = {The purpose of this study is to improve the performance of triple-junction space solar cells. The AlInGaP single-junction (SJ) cell was studied because greater radiation resistance has shown compared to a conventional InGaP top cell. AlInGaP SJ cells with varied layer thickness and carrier concentration of the base layer were prepared, and structural dependence on radiation resistance was investigated in order to determine an optimum structure for the AlInGaP top cell. The results confirmed that the preferred cell for the 10-year mission on geostationary Earth orbit would have a base layer thickness of 1,250 nm and a base layer carrier concentration of 3.0 x 10(exp 16)/cc or lower. This paper also compared radiation resistance of the AlInGaP SJ cell with that of the InGaP SJ cell. Even though InGaP is known to have excellent radiation resistance, the AlInGaP SJ cell exhibited better radiation resistance than the InGaP SJ cell. Superior radiation-resistant of AlInGaP material was demonstrated for an advanced top cell in a space triple-junction cell., 資料番号: AA0049500057, レポート番号: JAXA-SP-06-006},
 title = {宇宙用3接合太陽電池のトップセルとしてのAlInGaP単一接合太陽電池の構造最適化検討},
 year = {2006}
}