{"created":"2023-06-20T14:39:18.432830+00:00","id":6041,"links":{},"metadata":{"_buckets":{"deposit":"8c2b8840-a01f-4bec-b18b-e3d03089b7ed"},"_deposit":{"created_by":1,"id":"6041","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"6041"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00006041","sets":["1887:1893","9:789:998:1028"]},"author_link":["30068","30071","30069","30072","30070","30067"],"item_3_alternative_title_2":{"attribute_name":"その他のタイトル（英）","attribute_value_mlt":[{"subitem_alternative_title":"Study on optimum structure of AlInGaP top cell for triple-junction space solar cell"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-11-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"264","bibliographicPageStart":"261","bibliographicVolumeNumber":"JAXA-SP-06-006","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料: 平成18年度　宇宙航空研究開発機構　総合技術研究本部　宇宙科学研究本部　研究成果報告書"},{"bibliographic_title":"JAXA Special Publication: Report on Research Achievements for FY2006 Institute of Space and Astronautical Science, Institute of Aerospace Technology, Japan Aerospace Exploration Agency","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The purpose of this study is to improve the performance of triple-junction space solar cells. The AlInGaP single-junction (SJ) cell was studied because greater radiation resistance has shown compared to a conventional InGaP top cell. AlInGaP SJ cells with varied layer thickness and carrier concentration of the base layer were prepared, and structural dependence on radiation resistance was investigated in order to determine an optimum structure for the AlInGaP top cell. The results confirmed that the preferred cell for the 10-year mission on geostationary Earth orbit would have a base layer thickness of 1,250 nm and a base layer carrier concentration of 3.0 x 10(exp 16)/cc or lower. This paper also compared radiation resistance of the AlInGaP SJ cell with that of the InGaP SJ cell. Even though InGaP is known to have excellent radiation resistance, the AlInGaP SJ cell exhibited better radiation resistance than the InGaP SJ cell. Superior radiation-resistant of AlInGaP material was demonstrated for an advanced top cell in a space triple-junction cell.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0049500057","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-06-006","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"宇宙航空研究開発機構 総合技術研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 総合技術研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 総合技術研究本部"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Aerospace Technology"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Aerospace Technology"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Aerospace Technology"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"森岡, 千晴"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"今泉, 充"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岐部, 公一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Morioka, Chiharu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imaizumi, Mitsuru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kibe, Koichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"49500057.pdf","filesize":[{"value":"470.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"49500057.pdf","url":"https://jaxa.repo.nii.ac.jp/record/6041/files/49500057.pdf"},"version_id":"1fe5f97a-beac-45ca-832d-1b71ee07bb45"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"太陽電池","subitem_subject_scheme":"Other"},{"subitem_subject":"放射線耐性","subitem_subject_scheme":"Other"},{"subitem_subject":"航空宇宙環境","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体接合","subitem_subject_scheme":"Other"},{"subitem_subject":"有機金属化合物","subitem_subject_scheme":"Other"},{"subitem_subject":"有機金属蒸着","subitem_subject_scheme":"Other"},{"subitem_subject":"AlInGaPトップセル","subitem_subject_scheme":"Other"},{"subitem_subject":"プロトンビーム","subitem_subject_scheme":"Other"},{"subitem_subject":"キャリア濃度","subitem_subject_scheme":"Other"},{"subitem_subject":"最適化","subitem_subject_scheme":"Other"},{"subitem_subject":"solar cell","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"radiation tolerance","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"aerospace environment","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor junction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"organometallic compound","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"organometallic vapor deposition","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"AlInGaP top cell","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"proton beam","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"carrier concentration","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"optimization","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"宇宙用3接合太陽電池のトップセルとしてのAlInGaP単一接合太陽電池の構造最適化検討","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"宇宙用3接合太陽電池のトップセルとしてのAlInGaP単一接合太陽電池の構造最適化検討"}]},"item_type_id":"3","owner":"1","path":["1028","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"6041","relation_version_is_last":true,"title":["宇宙用3接合太陽電池のトップセルとしてのAlInGaP単一接合太陽電池の構造最適化検討"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:03:25.751173+00:00"}