@techreport{oai:jaxa.repo.nii.ac.jp:00006089,
 author = {鶴, 哲也 and 宮田, 浩旭 and 村松, 祐治 and 緒方, 康行 and 木下, 恭一 and 足立, 聡 and 依田, 眞一 and 荒井, 昌和 and 渡辺, 孝夫 and 近藤, 康洋 and Tsuru, Tetsuya and Miyata, Hiroaki and Muramatsu, Yuji and Ogata, Yasuyuki and Kinoshita, Kyoichi and Adachi, Satoshi and Yoda, Shinichi and Arai, Masakazu and Watanabe, Takao and Kondo, Yasuhiro},
 month = {Mar},
 note = {We grew compositionally homogeneous platy single crystals of In(0.1)Ga(0.9)As composition by the Traveling Liquidus Zone (TLZ) method. We also fabricated In(x)Ga(1-x)As-SQWs on the In(0.1)Ga(0.9)As substrate by the Metal Organic Vapor Epitaxy (MOVPE) method. In the photoluminescence (PL) measurement, we observed emission at 1.3 micrometer from the In(0.5)Ga(0.5)As/In(0.1)Ga(0.9)As-SQW., 資料番号: AA0049798001, レポート番号: JAXA-SP-05-036E},
 title = {Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)},
 year = {2006}
}